Backside depletion for backside illuminated image sensors

ABSTRACT

A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

PRIORITY DATA

This application is a continuation-in-part of U.S. application Ser. No.11/774,681, filed on Jul. 9, 2007, entitled “METHOD FOR IMPROVINGSENSITIVITY OF BACKSIDE ILLUMINATED IMAGE SENSORS” which claims priorityto U.S. Provisional Patent Application No. 60/827,611, filed on Sep. 29,2006, the entire disclosures of which are incorporated herein byreference.

BACKGROUND

An image sensor provides a grid of pixels, such as photosensitive diodesor photodiodes, reset transistors, source follower transistors, pinnedlayer photodiodes, non-pinned layer photodiodes and/or transfertransistors, for recording an intensity or brightness of light. Thepixel responds to the light by accumulating a charge—the more light, thehigher the charge. The charge can be processed by another circuit sothat a color and brightness can be used for a suitable application, suchas a digital camera. Common types of pixel grids include acharge-coupled device (CCD) or complimentary metal oxide semiconductor(CMOS) image sensor.

Backside illuminated sensors are used for sensing a volume of exposedlight projected towards the backside surface of a substrate. Backsideilluminated sensors provide a high fill factor and reduced destructiveinterference, as compared to front-side illuminated sensors. The pixelsare located on a front side of the substrate, and the substrate is thinenough so that light radiation projected towards the backside of thesubstrate can reach the pixels. Accordingly, the substrate is thinned toa reasonable thickness to provide a desired photo response and reducecross-talk. However, the process of thinning the substrate may causedamage to the silicon crystal lattice which can lead to an increase indark current for the image sensor device. That is, unwanted currentgenerated by pixels in the absence of illumination. There may be othersources for dark current such as impurities in the silicon wafer andheat build up in the pixel area. Excessive dark current may lead toimage degradation and poor device performance.

A need exists for a device and method that provides a backsideilluminated image sensor with reduced dark current without adverselyaffecting the performance of the device.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a top view of a backside illuminated image sensor deviceincluding a plurality of pixels.

FIG. 2 is a cross-sectional view of the image sensor device of FIG. 1.

FIG. 3 is a cross-sectional view of a backside illuminated image sensorwith an extended light sensing region and a shallow p+ doped layer.

FIG. 4 is a cross-sectional view of a backside illuminated image sensorwith a backside depletion region.

FIG. 5 is a flowchart of an exemplary method for fabricating thebackside illuminated image sensor of FIG. 4.

FIGS. 6 a-6 e are cross-sectional views of the backside illuminatedimage sensor of FIG. 4 at various stages of fabrication in accordancewith the method of FIG. 5.

FIG. 7 is a graph illustrating a quantum efficiency of various imagesensor configurations based on different light wavelengths.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a first feature over or on a second featurein the description that follows may include embodiments in which thefirst and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formedinterposing the first and second features, such that the first andsecond features may not be in direct contact.

Referring to FIG. 1, an image sensor 50 provides a grid or an array ofbackside illuminated (or back-illuminated) pixels 100. In the presentembodiment, the pixels 100 include photosensitive diodes or photodiodes,for recording an intensity or brightness of light on the diode. Thepixels 100 may further include reset transistors, source followertransistors, and transfer transistors. The image sensor 50 can be ofvarious different types, including a charge-coupled device (CCD), acomplimentary metal oxide semiconductor (CMOS) image sensor (CIS), anactive-pixel sensor (ACP), or a passive-pixel sensor. Additionalcircuitry and input/outputs are typically provided adjacent to the gridof pixels 100 for providing an operation environment for the pixels andfor supporting external communications with the pixels.

Referring now to FIG. 2, the image sensor 50 includes a substrate 110.The substrate 110 may comprise an elementary semiconductor such assilicon, germanium, and diamond. Alternatively, the substrate 110 mayoptionally comprise a compound semiconductor such as silicon carbide,gallium arsenic, indium arsenide, and indium phosphide. Also,semiconductor arrangements such as silicon-on-insulator and/or anepitaxial layer (also referred to as an “epilayer”) can be provided. Thesubstrate 110 may comprise an alloy semiconductor such as silicongermanium, silicon germanium carbide, gallium arsenic phosphide, andgallium indium phosphide. In the present embodiment, the substrate 110comprises a p− epilayer. The substrate 110 includes a front side surface113 and backside surface 114. All doping may be implemented using aprocess such as ion implantation or diffusion in various steps.Different dopings, including p-type or n-type, may be used. Thesubstrate 110 may further include lateral isolation features (not shown)to separate different devices formed on the substrate.

The sensor 50 includes a plurality of pixels 100 formed in the substrate110 underneath the front surface 113 of the substrate. For the sake ofexample, the pixels are further labeled 100R, 100G, and 100B tocorrespond with example light wavelengths of red, green, and blue,respectively. The pixel 100 may include a photodiode for sensing anamount of light radiation directed towards the pixel from the backsurface of the substrate 110. The photodiode may include a pinned layerphotodiode. The pinned layer photodiode may comprise of an n-type dopedregion formed in the p− epilayer and a heavily doped p-type region(referred also as p+ pinned layer) formed on the surface of the n-typedoped region. Accordingly, the p-n-p junction region (referred also asthe depletion region) makes up a light sensing region 112 of thephotodiode. Alternatively, the photodiode may optionally include anon-pinned layer photodiode. In continuance of the present example, thelight sensing regions are further labeled 112R, 112G, and 112B tocorrespond with the pixels 100R, 100G, and 100B, respectively.

As previously discussed, the image sensor 50 may be configured as anactive-pixel sensor wherein each pixel 100 includes a photodiode and anumber of transistors. The pixel 100 may be configured to absorb lightradiation and generate optical charges or photo-electrons that arecollected and accumulated in the light sensing region 112 of thephotodiode. The transistors may be configured to readout the generatedphoto-electrons and convert them into an electrical signal. Thetransistors include reset transistors, source follower transistors,transfer transistors, and other suitable transistors.

The image sensor 50 may further include additional layers, includingfirst and second interconnect metal layers 120, 122 and inter-layerdielectric 124, formed on the front surface 113 of the substrate 110.The interconnect metal layers provide connections between the variousmicroelectronic devices of the image sensor 50. The inter-layerdielectric 124 comprises a low-k material, as compared to a dielectricconstant of silicon dioxide. Alternatively, the inter-layer dielectric124 may comprise carbon-doped silicon oxide, fluorine-doped siliconoxide, silicon oxide, silicon nitride, and/or organic low-k material.The inter-layer dielectric may be formed by a technique includingspin-on, CVD, or sputtering. The material of the metal layers 120 and122 may include aluminum, copper, tungsten, titanium, titanium nitride,tantalum, tantalum nitride, metal silicide or combination thereof.Additionally, the interconnect metal layers 120, 122 and inter-layerdielectric 124 may be formed in an integrated process such as adamascene process or lithography/plasma etching process. The imagesensor 50 may further include a passivation layer 126 for protecting theimage sensor.

Additional circuitry also exists to provide an appropriate functionalityto handle the type of pixels 100 being used and the type of light beingsensed. It is understood that the wavelengths red, green, and blue areprovided for the sake of example, and that the pixels 100 are generallyillustrated as being photodiodes for the sake of example.

The image sensor 50 is designed to receive light radiation 150 directedtowards the back surface 114 of the substrate 110 during applications,eliminating any obstructions to the optical paths by other objects suchas gate features and metal lines, and maximizing the exposure of thelight-sensing region 112 to the illuminated light. The substrate 110 maybe thinned such that the light 150 directed through the back surface 114thereof may effectively reach on the photodiodes. The illuminated light150 may not be limited to visual light beam, but can be infrared (IR),ultraviolet (UV), and other radiation beam.

The image sensor 50 may further include a color filter layer 160 formedon the back surface 114 of the substrate 110. The color filter layer 160can support several different color filters (e.g., red, green, andblue), and may be positioned such that the incident light is directedthereon and there through. In one embodiment, such color-transparentlayers may comprise a polymeric material (e.g., negative photoresistbased on an acrylic polymer) or resin. The color filter layer 160 maycomprise negative photoresist based on an acrylic polymer includingcolor pigments. In continuance of the present example, color filters160R, 160G, and 160B correspond to pixels 100R, 100G, and 100B,respectively. The image sensor 50 may further include a plurality ofmicro-lens(es) 170 formed over the color filter layer 160 such that thebackside-illuminated light can be focused on the light-sensing regions112.

When light radiation 150 is directed through the back surface 114 of thesubstrate 110, electrons may be absorbed by the substrate 110 beforereaching light sensing region 112 of the photodiode. For example, aproblem exists when blue light is directed through the residualsubstrate 110, electrons are generated much closer to the backsidesurface 114. As a result, many of the electrons are quickly absorbed bythe substrate 110 and less electrons will reach the light sensing region112 of photodiode. This leads to poor photo sensitivity and poor pixelperformance.

Aspects of the present disclosure provide for improving sensitivity ofbackside illuminated image sensors by first reducing the thickness ofthe substrate 110 prior to implanting the p+ ions at the backsidesurface 114 of the substrate. Referring to FIG. 3, a backsideilluminated image sensor 300 with a shallow p+ doped layer 302 at thebackside is depicted. The image sensor 300 is similar to the imagesensor 50 of FIGS. 1 and 2 except for the differences noted below.Similar features in FIGS. 1-3 are numbered the same for clarity. In thisexample, the image sensor 300 is shown with only one pixel 100 forsimplicity and a better understanding of the present embodiment.

The resistance of substrate 110 may be first increased to extend thelight sensing region 112. In this example, the resistance of p− epilayeris increased from about 10 ohm to about 100 ohm. This causes the lightsensing region 112 to extend closer to the backside surface 114 of thep− epilayer. The typical thickness of the substrate 110 before thinningis about 745 μm. In one embodiment, the thinning of the substrate 110may be accomplished by grinding down the substrate followed byconventional multi-step wet etching to reduce the substrate to a desiredthickness in order to provide the desired photo response (sensitivity)and reduce cross-talk between pixels 100. Alternatively, the thinning ofthe substrate 110 may optionally be accomplished by chemical mechanicalplanarization (CMP) which uses a combination of mechanical polishing andchemical reaction.

Once the substrate 110 is thinned to the desired thickness, animplantation of p+ ions may be performed on the backside surface 114 ofthe p− epilayer to form the shallow p+ doped layer 302 at the backside.In an illustrative embodiment, the shallow p+ doped layer 302 may have athickness of about 100 A to about 1 μm and preferably about 100 A toabout 1000 A. The dopant may include a p-type dopant, such as boron,BF₂, or other suitable material. The implantation energy used to implantthe shallow p+ doped layer 302 may be between about 500 eV to about 500KeV. The concentration of the shallow p+ doped layer 302 may be betweenabout 1e16 cm⁻³ to about 1e21 cm⁻³.

By providing the shallow p+ doped layer 302 at the backside surface 114,the potential difference between the p− epilayer and the p+ doped layer302 is increased. Thus, electrons 320 may reach the light sensing region112 of the photodiode more easily without being absorbed by the p−epilayer. To provide a better electron response to blue light, thethickness of the shallow p+ doped layer 302 should be preferably lessthan 1000 A or 0.1 um.

Once the shallow p+ doped layer 302 is formed, an annealing may beperformed using a laser to activate the implantation of p+ ions. In thisillustrative embodiment, laser annealing is preferred over conventionalannealing techniques, such as Rapid Thermal Annealing (RTA), because thehigh temperature required for RTA may cause damage to the image sensor300. In particular, high temperatures over 450° C. may cause the metallayers 120 and 122 of image sensor 300 to melt. Since laser annealingonly requires a high temperature at the backside surface 114, the metallayers 120 and 122 of the image sensor 300 will not be affected. Oncethe p+ ion implantation is activated by laser annealing, fewer outdiffusions occur from the shallow p+ doped layer 302 to the p− epilayer.As a result, the shallow p+ doped layer 302 provides electricalgrounding and reduces leakage current of the image sensor 300 and at thesame time improves photo sensitivity, especially for blue light.Accordingly, quantum efficiency (percentage of incident light that isdetected) of the image sensor 300 is improved

During thinning of the substrate 110, the backside surface 114 may bedamaged which can lead to an increase in dark current. That is, unwantedcurrent (charges) generated in the absence of light radiation. This canlead to poor device performance. The p+ doped layer 302 of FIG. 3 at thebackside can reduce dark current and improve quantum efficiency.Additionally, aspects of the present disclosure provide for furtherreducing dark current without degrading quantum efficiency by providinga backside depletion region. Referring to FIG. 4, a backside illuminatedimage sensor 400 having a backside depletion region 402 is depicted. Theimage sensor 400 is similar to the image sensor 300 of FIG. 3. Similarfeatures in FIGS. 3 and 4 are numbered the same for clarity. Thebackside depletion region 402 has a depth 410 that is 20% less than athickness 420 of the substrate 110. In some embodiments, the thickness420 of the substrate 110 may be about 1 μm to about 5 μm. In some otherembodiments, the depth 410 of the depletion region 402 may be less than1000 A. The charges (e.g., electrons) that are generated at the backsidesurface 114 in the absence of light are collected in the backsidedepletion region 402 and thus, do not reach the light sensing region 112of the photodiode. Accordingly, dark current in the image sensor 400 maybe reduced.

Referring to FIG. 5, a flowchart of a method 500 for fabricating thebackside illuminated image sensor 400 of FIG. 4 is depicted. Referringalso to FIGS. 6 a-6 d, illustrated is the image sensor 400 of FIG. 4 atvarious stages of fabrication in accordance with the method 500 of FIG.5. The method 500 begins in block 510 in which a substrate 110 isprovided having a plurality of sensing elements formed in the substrateunderneath the front surface 113. Each sensing element includes at leasta photodiode such as a pinned layer photodiode having a light sensingregion 112. Further, the image sensor 400 may be configured as anactive-pixel sensor wherein each pixel 100 includes a photodiode and anumber of transistors (not shown). Additionally, interconnect metallayers 120, 124 and inter-layer dielectric 124 may be formed on thefront surface 113 of substrate 110. Further, a passivation layer 126 maybe formed over the metal layers 120, 122 and inter-layer dielectric.

In FIG. 6 a, the image sensor 400 is shown after formation of variouscomponents at the front surface 113 as discussed above. In the presentexample, the substrate 110 may include an p− epilayer and may have aninitial thickness 430. The typical thickness 430 of the substrate 110before thinning is about 745 μm. The method 500 continues with block 520in which the thickness of the substrate 110 is reduced from the backsurface 440. The substrate 110 may be thinned by first grinding down thesubstrate followed by multi-step wet etching, or CMP to reduce thesubstrate to a desired thickness 420. The thickness 420 of the substrate110 may be about 1 μm to about 5 μm. In FIG. 6 b, the method 500continues with block 530 in which p+ ions may be implanted 450 at thebackside surface 114 of the substrate 110 to form a p+ doped layer 455.In the present example, the p+ doped layer 455 has a reverseconductivity type to a minority carrier (e.g., electrons) associatedwith charges generated in the image sensor 400. Accordingly, the dopantmay include a p-type dopant, such as boron, BF₂, or other suitablematerial. The implantation energy range is between about 500 eV to about50 KeV. The dosage of about 10e3 atoms/cm² to about 50e5 atoms/cm² maybe utilized. The depth of the p+ doped layer may vary and will depend onthe implantation energy used.

In FIG. 6 c, the method 500 continues with block 540 in which n+ ionsmay be implanted 460 from the backside surface 114 of the substrate 110to form an n+ doped layer 465. In the present embodiment, the n+ ionsmay be implanted 460 at a depth (from the backside surface 114) that isless than the depth of the p+ ions implanted in block 530. That is, then+ doped layer 465 is located between the p+ doped layer 455 and thebackside surface 114. The dopant may include an n-type dopant, such asAs, P, or other suitable material. The implantation energy used toimplant the n+ ions may be between about 500 eV to about 40 KeV. Thedosage of about 10e3 atoms/cm² to about 50e5 atoms/cm² may be utilized.In FIG. 6 d, once the p+ and n+ ion implantations are complete, themethod 500 continues with block 550 in which a laser annealing 470 isperformed at the backside surface 114 to activate the implantation. Thelaser annealing 470 requires a high temperature near the backsidesurface 114. The laser annealing 470 includes utilizing a power densityranging from 0.5 to about 10 J/cm². Accordingly, the metal layers 120,122 of the image sensor 400 are not affected.

In FIG. 6 e, a depletion region 402 is shown at the backside surface 114and has a depth 410 that is 20% less than the thickness 420 of thesubstrate 110. The depth 410 of the depletion region 402 is preferablyless than 1000 A. The depletion region 402 is associated with a junctionof the p+ doped layer 455, n+ doped layer 465, and p− epilayer.Accordingly, the depth 410 of the depletion region 402 may be accuratelydetermined and will depend on the formation (e.g., implantation energy,dosage, etc.) of the p+ doped layer 455 and n+ doped layer 465 in the p−epilayer as described in blocks 530 and 540.

The method 500 continues with block 560 in which a color filter layer160 is formed over the backside surface 114. The color filter layer 160may support several different color filters (e.g., red, green, andblue). The method 500 continues with block 570 in which a plurality ofmicro-lens(es) 170 may be formed over the color filter layer 160. Themicro-lens(es) 170 are configured to focus light radiation directedtowards the backside surface 114 to the light sensing region 112 of theimage sensor 400. It has been observed that by providing the backsidedepletion region 402, dark current in the image sensor 400 is furtherreduced as compared to dark current generated in the image sensor 300 ofFIG. 3. Further, a quantum efficiency of the image sensor 400 issubstantially equivalent to a quantum efficiency of the image sensor 300as shown below. Therefore, the image sensor 400 having the backsidedepletion region 402 further reduces dark current without degradingdevice performance.

Referring to FIG. 7, illustrated is a graph 700 showing a quantumefficiency (percentage of incident light (electrons) that is detected)of various image sensors based on different wavelengths of lightradiation. In graph 700, the X-axis 702 represents various lightwavelengths in μm. The Y-axis 704 represents the quantum efficiency ofthe image sensor. A curve 706 represents a backside illuminated imagesensor (such as the image sensor 50 of FIG. 2) without a p+ doped layerand n+ doped layer implanted at the backside. A curve 708 represents abackside illuminated image sensor (such as the image sensor 300 of FIG.3) with a p+ doped layer implanted at the backside. A curve 710represents a backside illuminated image sensor (such as the image sensor400 of FIG. 4) with a p+ doped layer and n+ doped layer (e.g., backsidedepletion region) implanted at the backside.

As shown in FIG. 7, the quantum efficiency (curve 708) of the backsideilluminated image sensor 300 (FIG. 3) with the p+ doped layer implantedat the backside surface is substantially equal to the quantum efficiency(curve 710) of the backside illuminated image sensor 400 (FIG. 4) withthe p+ doped layer and n+ doped layer (e.g., backside depletion region)implanted at the backside. In other words, the image sensors 300 and 400have substantially the same photo sensitivity across the range ofwavelengths. However, both of these image sensor 300 and 400 have abetter quantum efficiency (curves 708 and 710) than the quantumefficiency (curve 706) of the backside illuminated image sensor 50 (FIG.2) without a p+ doped layer and n+ doped layer implanted at thebackside. That is, the photo sensitivity of the backside illuminatedimage sensors 300 (p+ doped layer at the backside) and 400 (p+ dopedlayer and n+ doped layer at the backside) is better than the imagesensor 50 without the p+ doped layer and n+ doped layer implanted at thebackside.

It should be noted that the type of dopants (e.g., n-type and p-type)and process parameters (e.g., implantation energy, dosage, etc.) used inthe above embodiments are mere examples and that modifications arepossible in the exemplary embodiments without materially departing fromthe novel teachings and advantages of this disclosure. For example,various features and the doping configurations disclosed herein may bereversed accordingly.

In summary, aspects of the present disclosure provides a method forreducing dark current for backside illuminated image sensors. Duringfabrication of the image sensor, the backside of the substrate isthinned to a reasonable thickness to provide for a desired photoresponse and reduce cross talk. However, this may damage the backsurface of the substrate which can lead to an increase in dark current.By providing a depletion region at the backside, the charge carriersthat are generated at the back surface in the absence of light radiation(e.g., dark current) may be collected in the backside depletion regionand thus, do not reach the light sensing region of the photodiode. Thus,with the aspects of the present disclosure, dark current is reducedwithout degrading the quantum efficiency of the image sensor.

In one embodiment, a backside illuminated image sensor is provided,which includes a substrate having a front side and a backside, a sensorformed in the substrate at the front side, the sensor including at leasta photodiode, and a depletion region formed in the substrate at thebackside, wherein a depth of the depletion region is less than 20% of athickness of the substrate. In some embodiments, the thickness of thesubstrate is about 1 μm to about 5 μm. In some other embodiments, thesubstrate is a type selected from the group consisting of: a p typesubstrate, an n type substrate, an epitaxial layer,silicon-on-insulator, silicon, and combinations thereof.

In other embodiments, the depth of the depletion region is less than1000 A. In still other embodiments, the photodiode is a type selectedfrom a group consisting of: a pinned layer photodiode and a non-pinnedlayer photodiode. In other embodiments, the sensor is a type selectedfrom the group consisting of: an active pixel sensor and a passive pixelsensor. In other embodiments, the image sensor further includes a metalinterconnection layer and interlayer dielectric formed on the front sideof the substrate, a color filter formed on the backside of the substrateand aligned with the sensor, and a microlens formed over the colorfilter.

In another embodiment, a method for fabricating a backside illuminatedimage sensor is provided, which includes providing a substrate having afront side, a backside, and a first thickness, forming a plurality ofsensors in the substrate at the front side, wherein each of theplurality of sensors includes at least a photodiode, reducing thethickness of the substrate from the first thickness to a secondthickness, and forming a depletion region in the substrate at thebackside, wherein a depth of the depletion region is less than 20% ofthe second thickness of the substrate. In some embodiments, the step offorming the depletion region includes: implanting ions of a firstconductivity type at a first depth from the backside of the substrate,implanting ions of a second conductivity type at a second depth from thebackside of the substrate, and performing laser annealing to activatethe ions of the first conductivity type and ions of the secondconductivity type. The first conductivity type is different from thesecond conductivity type and the second depth is less than the firstdepth.

In other embodiments, step of implanting ions of the first conductivitytype includes utilizing a p-type dopant, an energy of 500 eV to about 50KeV, and a dosage of 10e3 atoms/cm² to about 50e5 atoms/cm². In someother embodiments, the step of implanting ions of the secondconductivity type includes utilizing an n-type dopant, an energy of 500eV to about 40 KeV, and a dosage of 10e3 atoms/cm² to about 50e5atoms/cm². In still other embodiment, the step of performing laserannealing includes utilizing a power density of about 0.5 J/cm² to about10 J/cm². In other embodiments, the depth of the depletion region isless than about 1000 A. In other embodiments, the second thickness ofthe substrate is about 1 μm to about 5 μm.

In still another embodiment, a semiconductor device is provided, whichincludes a semiconductor substrate having a front surface and a backsurface, a plurality of sensing elements formed in substrate underneaththe front surface, wherein each of the sensing elements includes atleast a photodiode for sensing light radiation directed towards the backsurface, a first doped layer formed in the substrate at a first depthfrom the back surface, and a second doped layer formed in the substrateat a second depth from the back surface, the second depth being lessthan the first depth. A depth of a depletion region associated with thefirst and second doped layers is less than 20% of a thickness of thesemiconductor substrate.

In some embodiments, the depth of the depletion region is less thanabout 1000 A. In some other embodiments, the thickness of thesemiconductor substrate is about 1 m to about 5 μm. In otherembodiments, the first doped layer includes a p+ doped layer and thesecond doped layer includes an n+ doped layer. In still some otherembodiments, the device includes a metal interconnection layer andinterlayer dielectric formed on the front surface of the substrate, acolor filter formed on the back surface of the substrate and alignedwith the sensor, and a microlens formed over the color filter.

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion. It is also emphasized that thedrawings appended illustrate only typical embodiments of this inventionand are therefore not to be considered limiting in scope, for theinvention may apply equally well to other embodiments. For example,various features and the doping configurations disclosed herein may bereversed accordingly.

Although only a few exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. For example, the depletion region may beformed by implanting an n+ doped layer in the p− substrate instead ofimplanting a p+ doped layer and n+ doped layer in the p− substrate. Itis understood that various different combinations of the above-listedsteps can be used in various sequences or in parallel, and there is noparticular step that is critical or required. Also, features illustratedand discussed above with respect to some embodiments can be combinedwith features illustrated and discussed above with respect to otherembodiments. Accordingly, all such modifications are intended to beincluded within the scope of this invention. Several differentadvantages exist from these and other embodiments such as reduction ofdark current without degradation to quantum efficiency, cost effective,and easy to manufacture.

What is claimed is:
 1. A backside illuminated image sensor, comprising:a semiconductive substrate having a first conductivity type and a firstdoping concentration, the semiconductive substrate having a firstsurface and a second surface opposite the first surface; a sensor formedin the semiconductive substrate at the first surface, the sensorincluding at least a photodiode; a first doped region formed in thesemiconductive substrate proximate to the second surface, the firstdoped region having the first conductivity type and a second dopingconcentration that is greater than the first doping concentration; asecond doped region formed in the semiconductive substrate adjacent tothe first doped region such that the second doped region is positionedbetween the first doped region and the second surface, the second dopedregion having a second conductivity type that is opposite the firstconductivity type, and further wherein the first doped region and thesecond doped region form a depletion region in the semiconductivesubstrate; a metal interconnection structure formed on the first surfaceof the substrate; a color filter formed on the second surface of thesemiconductive substrate and aligned with the sensor; and a microlensformed on the color filter.
 2. The backside illuminated image sensor ofclaim 1, wherein the thickness of the substrate is about 1 μm to about 5μm.
 3. The backside illuminated image sensor of claim 1, wherein thefirst conductivity type is p-type and the second conductivity type isn-type.
 4. The backside illuminated image sensor of claim 1, wherein thedepletion region has a depth that extends into the semiconductivesubstrate from the second surface, the depth being less than 20% of athickness of the semiconductive substrate.
 5. The backside illuminatedimage sensor of claim 1, wherein the semiconductive substrate is anepitaxial layer.
 6. The backside illuminated image sensor of claim 1,wherein the sensor is a type selected from the group consisting of: anactive pixel sensor and a passive pixel sensor.
 7. The backsideilluminated sensor of claim 1, further comprising a passivation layerformed over the metal interconnection layer.
 8. A semiconductor devicecomprising: a silicon substrate having a front surface and a backsurface; a plurality of sensing elements formed in the silicon substrateunderneath the front surface, wherein each of the sensing elementsincludes at least a photodiode for sensing light radiation directedtowards the back surface; a first doped region formed in a portion ofthe silicon substrate at a first depth from the back surface; a seconddoped region formed in a portion of the silicon substrate at a seconddepth from the back surface, the second depth being less than the firstdepth, such that the second doped region is located between the firstdoped region and the back surface of the silicon substrate; a depletionregion associated with the first and second doped regions, wherein thedepletion region extends a third depth into the silicon substrate fromthe back surface, the third depth being less than 20% of a thickness ofthe silicon substrate; and a metal interconnection layer and interlayerdielectric formed on the front surface of the silicon substrate.
 9. Thesemiconductor device of claim 8, wherein the depth of the depletionregion is less than about 1000 A.
 10. The semiconductor device of claim8, wherein the thickness of the semiconductor substrate is about 1 μm toabout 5 μm.
 11. The semiconductor device of claim 8, wherein the siliconsubstrate is a p-type silicon substrate, the first doped region is a p+doped region and wherein the second doped region is an n+ doped region.12. The semiconductor device of claim 8, further comprising: a colorfilter formed on the back surface of the silicon substrate, the colorfilter being aligned with one of the plurality of sensing elements; anda microlens formed on the color filter.
 13. The semiconductor device ofclaim 8, further comprising a passivation layer formed over the metalinterconnection layer.
 14. A backside illuminated image sensor,comprising: a substrate having a first surface and a second surfaceopposite the first surface; a sensor formed in the substrate at thefirst surface, the sensor including at least a photodiode disposed atthe first surface of the substrate, the photodiode for sensing lightdirected towards the second surface; a first doped region disposed inthe substrate proximate to the second surface, the first doped regionbeing a first conductivity type; a second doped region disposed in thesubstrate between the first doped region and the second surface, thesecond doped region being a second conductivity type, wherein the secondconductivity type is opposite the first conductivity type, and furtherwherein a depletion region is formed in the substrate adjacent to thesecond surface, wherein the depletion region extends a depth into thesubstrate from the second surface, the depth being less than 20% of athickness of the substrate; a metal interconnection layer and interlayerdielectric formed on the first surface of the substrate; a passivationlayer formed over the metal interconnection layer; a color filter formedon the second surface of the substrate and aligned with the sensor; anda microlens formed on the color filter.
 15. The backside illuminatedimage sensor of claim 14, wherein the depth into the substrate from thesecond surface of the substrate is less than about 1000 A.
 16. Thebackside illuminated image sensor of claim 14, wherein the thickness ofthe substrate is about 1 μm to about 5 μm.
 17. The backside illuminatedimage sensor of claim 14, wherein the substrate has the firstconductivity type and a first doping concentration, wherein the firstdoped region has the first conductivity type and a second dopingconcentration that is greater than the first doping concentration. 18.The backside illuminated image sensor of claim 14, wherein the firstdoped region and the second doped region form the depletion region.